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dc.contributor.authorImtiaz Ahmed
dc.contributor.authorDana Weinstein
dc.contributor.otherDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
dc.contributor.otherDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
dc.date.accessioned2025-10-09T05:26:53Z
dc.date.available2025-10-09T05:26:53Z
dc.date.issued01-04-2021
dc.identifier.urihttps://www.mdpi.com/2072-666X/12/4/461
dc.identifier.urihttp://digilib.fisipol.ugm.ac.id/repo/handle/15717717/41025
dc.description.abstractThis work presents a comprehensive comparison of switchable electromechanical transducers in an AlN/GaN heterostructure toward the goal of reconfigurable RF building blocks in next-generation ad hoc radios. The transducers’ inherent switching was achieved by depleting a 2D electron gas (2DEG) channel, allowing an RF signal launched by interdigital transducers (IDTs) to effectively excite the symmetric (S<sub>o</sub>) Lamb mode of vibration in the piezoelectric membrane. Different configurations for applying DC bias to the channel for electromechanical actuation in the piezoelectric are discussed. Complete suppression of the mechanical mode was achieved with the transducers in the OFF state. Equivalent circuit models were developed to extract parameters from measurements by fitting in both ON and OFF states. This is the first time that an extensive comparative study of the performance of different switchable transducers in their ON/OFF state is presented along with frequency scaling of the resonant mode. The switchable transducer with Ohmic IDTs and a Schottky control gate showed superior performance among the designs under consideration.
dc.language.isoEN
dc.publisherMDPI AG
dc.subject.lccMechanical engineering and machinery
dc.titleSwitchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis
dc.typeArticle
dc.description.keywordsMEMS resonator
dc.description.keywordsGaN
dc.description.keywordsheterostructure
dc.description.keywords2DEG
dc.description.keywordsswitchable
dc.description.keywordspiezoelectric
dc.description.doi10.3390/mi12040461
dc.title.journalMicromachines
dc.identifier.e-issn2072-666X
dc.identifier.oaioai:doaj.org/journal:5acee0d68dc4491688351f5fe49d7b58
dc.journal.infoVolume 12, Issue 4


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