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Ultrathin Cu(In,Ga)Se<sub>2</sub> Solar Cells with Ag/AlO<sub>x</sub> Passivating Back Reflector

dc.contributor.authorJessica de Wild
dc.contributor.authorGizem Birant
dc.contributor.authorGuy Brammertz
dc.contributor.authorMarc Meuris
dc.contributor.authorJef Poortmans
dc.contributor.authorBart Vermang
dc.contributor.otherInstitute for Material Research (IMO), Hasselt University (Partner in Solliance), Wetenschapspark 1, 3590 Diepenbeek, Belgium
dc.contributor.otherInstitute for Material Research (IMO), Hasselt University (Partner in Solliance), Wetenschapspark 1, 3590 Diepenbeek, Belgium
dc.contributor.otherInstitute for Material Research (IMO), Hasselt University (Partner in Solliance), Wetenschapspark 1, 3590 Diepenbeek, Belgium
dc.contributor.otherInstitute for Material Research (IMO), Hasselt University (Partner in Solliance), Wetenschapspark 1, 3590 Diepenbeek, Belgium
dc.contributor.otherInstitute for Material Research (IMO), Hasselt University (Partner in Solliance), Wetenschapspark 1, 3590 Diepenbeek, Belgium
dc.contributor.otherInstitute for Material Research (IMO), Hasselt University (Partner in Solliance), Wetenschapspark 1, 3590 Diepenbeek, Belgium
dc.date.accessioned2021-07-23T14:39:05Z
dc.date.available2025-10-02T04:54:17Z
dc.date.issued01-07-2021
dc.identifier.issn-
dc.identifier.urihttps://www.mdpi.com/1996-1073/14/14/4268
dc.description.abstractUltrathin Cu(In,Ga)Se<sub>2</sub> (CIGS) absorber layers of 550 nm were grown on Ag/AlO<sub>x</sub> stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlO<sub>x</sub>. A current increase of almost 2 mA/cm<sup>2</sup> was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlO<sub>x</sub> stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlO<sub>x</sub> back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlO<sub>x</sub> stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.
dc.format-
dc.language.isoEN
dc.publisherMDPI AG
dc.relation.uri['https://www.springernature.com/gp/open-research/policies/journal-policies/apc-waiver-countries', 'https://molcellped.springeropen.com/submission-guidelines', 'https://molcellped.springeropen.com/about', 'https://molcellped.springeropen.com/']
dc.rightsCC BY
dc.subject['molecular medicine', 'paediatrics', 'translational medicine', 'Pediatrics', 'RJ1-570']
dc.subject.lccTechnology
dc.titleUltrathin Cu(In,Ga)Se<sub>2</sub> Solar Cells with Ag/AlO<sub>x</sub> Passivating Back Reflector
dc.typeArticle
dc.description.keywordsCu(In,Ga)Se<sub>2</sub>
dc.description.keywordsultrathin films
dc.description.keywordssilver doping
dc.description.keywordsAlO<sub>x</sub>
dc.description.keywordspassivation
dc.description.keywordsoptical enhancement
dc.description.pages-
dc.description.doi10.3390/en14144268
dc.title.journalEnergies
dc.identifier.e-issn1996-1073
dc.identifier.oaioai:doaj.org/journal:43b7f0d7cf014e1ca99369f4f51ce193
dc.journal.infoVolume 14, Issue 14


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