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dc.contributor.authorYang Yang
dc.contributor.authorWeishuang Fang
dc.contributor.authorHuixing Lin
dc.contributor.authorJie Li
dc.contributor.authorHuaicheng Xiang
dc.contributor.authorYing Tang
dc.contributor.authorLei Li
dc.contributor.authorLiang Fang
dc.contributor.otherGuangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, and Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
dc.contributor.otherKey Laboratory of Inorganic Functional Material and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
dc.contributor.otherKey Laboratory of Inorganic Functional Material and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
dc.contributor.otherGuangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, and Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
dc.contributor.otherGuangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, and Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
dc.contributor.otherGuangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, and Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
dc.contributor.otherLaboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
dc.contributor.otherGuangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, and Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
dc.date.accessioned2024-11-11T03:49:13Z
dc.date.available2025-10-02T05:21:42Z
dc.date.issued01-09-2024
dc.identifier.issn-
dc.identifier.urihttps://www.sciopen.com/article/10.26599/JAC.2024.9220947
dc.description.abstractDielectric ceramics with low permittivity (εr), high quality factor (Q×f), and near-zero resonant frequency (τf) in the microwave bands are key materials used in fifth/sixth-generation (5G/6G) telecommunication, whileτf of most low-εr microwave dielectric ceramics is relatively negative. In this work, the first low-εr Ga-based ceramic SrGa12O19 with an anomalous positive τf was reported, and the causes of the positive τf, intrinsic polarization, and loss mechanism were systematically studied. X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that the SrGa12O19 ceramic formed a pure hexagonal magnetoplumbite structure with spinel blocks and rock-salt blocks stacked along the crystallographic c-axis. When sintered at 1430 °C, it possessed the optimal microwave dielectric properties of a low εr of 14.46, high Q×f of 64,705 GHz, and exceptional positive τf of +55.7 ppm/°C, along with a low linear thermal expansion coefficient (αL) of 11.617 ppm/°C. The large positive deviation between εr and εr(C–M) of 45.31% resulted from the rattling effect of atoms in the rock-salt block. The unique positive τf (+55.7 ppm/°C) was governed by the rattling effect, resulting in a positive ταm (the temperature coefficient of ion polarizability) of 8.489 ppm/°C and a large negative temperature coefficient of permittivity (τε) of −132.864 ppm/°C. Phillips–Vechten–Levine (P–V–L) chemical bond theory revealed greater contributions of the spinel block to bond ionicity (fi, 52.95%), permittivity (ε, 55.15%), bond energy (E, 56.87%), and lattice energy (U, 74.88%) than those of the rock-salt block. The intrinsic dielectric properties were analyzed using infrared (IR) reflectivity spectra. The favorable performance of the SrGa12O19 ceramic indicated that it is a novel τf compensator. This selection of compounds with different structural layer combinations provides a new idea for exploring excellent microwave dielectric ceramics.
dc.format-
dc.language.isoEN
dc.publisherTsinghua University Press
dc.relation.uri['https://bnrc.springeropen.com/about', 'https://bnrc.springeropen.com/submission-guidelines', 'https://bnrc.springeropen.com']
dc.rightsCC BY
dc.subject['science', 'engineering', 'medicine', 'Science', 'Q']
dc.subject.lccClay industries. Ceramics. Glass
dc.titleSrGa12O19: The first low-εr Ga-based microwave dielectric ceramic with anomalous positive τf
dc.typeArticle
dc.description.keywordsmagnetoplumbite
dc.description.keywordsmicrowave dielectric properties
dc.description.keywordsrattling effect
dc.description.keywordschemical bond theory
dc.description.pages1432-1441
dc.description.doi10.26599/JAC.2024.9220947
dc.title.journalJournal of Advanced Ceramics
dc.identifier.e-issn2227-8508
dc.identifier.oaioai:doaj.org/journal:c4c92bcee3a64424b5e3ed3dc051342c
dc.journal.infoVolume 13, Issue 9


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