Integrated silicon photonics in the mid-infrared is a promising platform for cheap and miniaturized chemical sensors, including gas and/or liquid sensors for environmental monitoring and the consumer electronics market. One major challenge in integrated photonics is the design of an integrated detector sensitive enough to detect minimal changes in light intensity resulting from, for example, the absorption by the analyte. Further complexity arises from the need to fabricate such detectors at a high throughput with high requirements on fabrication tolerances. Here we analyze and compare the sensitivity of three different chip-integrated detectors at a wavelength of 4.17 µm, namely a resistance temperature detector (RTD), a diode and a vertical-cavity enhanced resonant detector (VERD).