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dc.contributor.authorCristina Consani
dc.contributor.authorThomas Söllradl
dc.contributor.authorChristian Ranacher
dc.contributor.authorAndreas Tortschanoff
dc.contributor.authorLukas Rauter
dc.contributor.authorGerald Pühringer
dc.contributor.authorThomas Grille
dc.contributor.authorPeter Irsigler
dc.contributor.authorBernhard Jakoby
dc.contributor.otherCTR Carinthian Tech Research AG, 9524 Villach, Austria
dc.contributor.otherCTR Carinthian Tech Research AG, 9524 Villach, Austria
dc.contributor.otherCTR Carinthian Tech Research AG, 9524 Villach, Austria
dc.contributor.otherCTR Carinthian Tech Research AG, 9524 Villach, Austria
dc.contributor.otherCTR Carinthian Tech Research AG, 9524 Villach, Austria
dc.contributor.otherInstitute for Microelectronics and Microsensors, Johannes Kepler University Linz, 4040 Linz, Austria
dc.contributor.otherInfineon Technologies Austria AG, 9500 Villach, Austria
dc.contributor.otherInfineon Technologies Austria AG, 9500 Villach, Austria
dc.contributor.otherInstitute for Microelectronics and Microsensors, Johannes Kepler University Linz, 4040 Linz, Austria
dc.date.accessioned2018-11-30T08:20:15Z
dc.date.available2025-10-02T03:46:49Z
dc.date.issued01-11-2018
dc.identifier.issn-
dc.identifier.urihttps://www.mdpi.com/2504-3900/2/13/796
dc.description.abstractIntegrated silicon photonics in the mid-infrared is a promising platform for cheap and miniaturized chemical sensors, including gas and/or liquid sensors for environmental monitoring and the consumer electronics market. One major challenge in integrated photonics is the design of an integrated detector sensitive enough to detect minimal changes in light intensity resulting from, for example, the absorption by the analyte. Further complexity arises from the need to fabricate such detectors at a high throughput with high requirements on fabrication tolerances. Here we analyze and compare the sensitivity of three different chip-integrated detectors at a wavelength of 4.17 µm, namely a resistance temperature detector (RTD), a diode and a vertical-cavity enhanced resonant detector (VERD).
dc.format-
dc.language.isoEN
dc.publisherMDPI AG
dc.relation.uri['http://revistas.uned.es/index.php/ETFI/about/editorialPolicies#focusAndScope', 'http://revistas.uned.es/index.php/ETFI', 'http://revistas.uned.es/index.php/ETFI/about/submissions#authorGuidelines']
dc.rightsCC BY-NC
dc.subject['prehistory', 'archaeology', 'archaeological heritage', 'rock art', 'upper paleolithic', 'solutrean', 'Prehistoric archaeology', 'GN700-890', 'Auxiliary sciences of history', 'C', 'Archaeology', 'CC1-960']
dc.subject.lccGeneral Works
dc.titleSensitivity Comparison of Integrated Mid-Infrared Silicon-Based Photonic Detectors
dc.typeArticle
dc.description.keywordssilicon photonics
dc.description.keywordsmid-infrared detectors
dc.description.keywordscavity-enhanced resonant detector
dc.description.keywordsintegrated photonics
dc.description.pages-
dc.description.doi10.3390/proceedings2130796
dc.title.journalProceedings
dc.identifier.e-issn2504-3900
dc.identifier.oaioai:doaj.org/journal:855b84d111094d8a979eff1b5f2c305a
dc.journal.infoVolume 2, Issue 13


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